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PTF 10153 60 Watts, 1.8-2.0 GHz GOLDMOS (R) Field Effect Transistor
Description
The PTF 10153 is an internally matched 60-watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It operates with 40% efficiency and 11.5 dB minimum gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * * INTERNALLY MATCHED Guaranteed Performance at 1805, 1843, 1880 MHz, 28 V - Output Power = 60 Watts Min - Power Gain = 11.5 dB Min Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability
* * * * *
60 50 40 30
Typical Output Power & Efficiency vs. Input Power
90
Output Power (Watts)
60 50 40 30 20 10 0 0 2 4 6 8 10 12
Efficiency (%)
80 70
VDD = 28 V IDQ = 650mA f = 1880 MHz
A-12
20 10 0
1015 3456 3 99
53
Input Power (Watts)
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 60 W, IDQ = 650 mA, f = 1805, 1843, 1880 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 650 mA, f = 1880 MHz) Drain Efficiency (VDD = 28 V, POUT = 60 W, IDQ = 650 mA, f = 1805, 1843, 1880 MHz) Return Loss (VDD = 28 V, POUT = 60 W, IDQ = 650 mA, f = 1805, 1843, 1880 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 650 mA, f = 1805 --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated.
Symbol
Gps
Min
11.5
Typ
--
Max
--
Units
dB
P-1dB hD
60 40
-- --
-- --
Watts %
--
--
--
-9.5
dB
Y
--
--
10:1
--
e
1
PTF 10153
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 0.5 A
Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 1.0
Typ
-- -- -- --
Max
-- 1 5.0 --
Units
Volts mA Volts Siemens
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
65 20 200 237 1.35 -40 to +150 0.74
Unit
Vdc Vdc C Watts W/C C C/W
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency
Output Power & Efficiency
12 11
Gain (dB)
Broadband Test Fixture Performance
Efficiency (%)
16 50 40
90 76 62
Output Pow er (W)
Gain (dB)
Gain
12
Gain
9 8 7 1750
48
IDQ = 650 mA
8
VDD = 28 V IDQ = 650 mA
1800 1850
POUT = 60 W
Return Loss (dB)
1820 1840 1860
-10 20
10 -15
Efficiency (%)
34
1900
1950
20 2000
4 1800
0 -25 1880
Frequency (MHz)
Frequency (MHz)
2
Return Loss
10
VDD = 28V
- 30 5
Efficiency
20
60
e
Capacitance vs. Supply Voltage *
240 24 200 160 120 80 40 0 0 10 20 30 40
PTF 10153
Bias Voltage vs. Temperature
1.03 1.02 Voltage normalized to 1.0 V Series show current (A)
0.400 1.383 2.367 3.350 4.333 5.317
Cds and Cgs (pF)
18
Bias Voltage (V)
VGS = 0 V f = 1 MHz
1.01 1.00 0.99 0.98 0.97 0.96
12
Cds
6
Crss
0
Crss
Cgs
0.95 -20 30 Temp. (C) 80 130
Supply Voltage (Volts)
Output Power (@ 1 dB Compression) vs. Supply Voltage
100
Power Gain vs. Output Power
14.0
IDQ = 650
Output Power (Watts)
80
Power Gain (dB)
13.5
IDQ = 550
13.0
60 40 20 24 26 28 30 32 34 36
IDQ = 450
IDQ = 650mA f =1880 MHz
12.5
VDD = 28 V f = 1880 MHz
12.0 1 10 100
Supply Voltage (Volts)
Output Power (Watts)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
0 -10
2-Tone IMD vs. Output Power
(as measured in a broadband circuit)
-20
VDD = 28V, IDQ = 650 mA
-30
IMD (dBc)
IMD (dBc)
-20 -30
f1 = 1880 MHz, f2 = 1879 MHz
3rd Order 5th
-40 -50 -60 -70
VDD = 28 V IDQ = 650 mA f1 = 1880 MHz f2 = 1879 MHz
-40 -50 -60 -70 0 20 40 60 80
7th
10
30
50
70
90
Output Power (Watts-PEP)
Output Power (Watts-PEP)
* This part is internally matched. Measurements of the finished product will not yield these results.
3
PTF 10153
Impedance Data
D
AT O
e
TOW AR
G S
D GE NER
Frequency
MHz 1805 1842 1880 1930 1960 1990 2000 R
Z Source W
jX -3.40 -3.86 -4.04 -5.10 -5.90 -6.75 -7.40 R 2.27 3.05 4.07 4.56 6.10 7.50 8.75
Z Load W
jX 1.20 1.31 1.31 1.68 1.74 1.61 1.64 2.12 1.97 1.88 1.59 1.46 1.48 1.53
- WAVEL ENGT HS
2000 MHz
0.0 0.1 TOWA RD LOAD G THS
0.2
0.3
1805 MHz
Z Source
0.1
<---
E LE WAV
N
2000 MHz
0 .2
.3
Test Circuit
Block Diagram for f = 2 GHz D.U.T.
l1 l2 l3 l4 l5 l6 l7 l8 l9 l10
PTF 10153 0.086 l 2 GHz 0.132 l 2 GHz 0.112 l 2 GHz 0.064 l 2 GHz 0.127 l 2 GHz 0.041 l 2 GHz 0.206 l 2 GHz 0.077 l 2 GHz 0.070 l 2 GHz 0.028 l 2 GHz
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0.4
0 .2
VDD = 28 V, POUT = 60 W, IDQ = 650 mA
Z Source
Z Load
Z0 = 50 W
R -->
0.1
Z Load
1805 MHz
e
PTF 10153
Assembly Diagram (not to scale)
Artwork (not to scale)
Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA
1877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. L3 (c) 1999, 2000 Ericsson Inc. EUS/KR 1522-PTF 10153 Uen Rev. B 11-06-00
5

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